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Negative Capacitance Phenomenon in GaAs-Based MIS Devices Under Ionizing Radiation

Year 2023, , 156 - 162, 04.06.2023
https://doi.org/10.17694/bajece.1210121

Abstract

This study focuses on the abnormal peaks observed in voltage-dependent capacitance graphs and negative capacitance behaviors of the GaAs-based MOS devices for the unirradiated sample and after exposing the device to 5 and 10 kGy ionizing (gamma) radiation doses. Experimental results showed that the amplitude of the abnormal peaks, observed at about 1.75 V, increases with the irradiation dose. The peak point was also shifted toward the positive biases after irradiation. Furthermore, the conductance values increased rapidly and reached their maximum level, while the capacitance values reached their minimum level in the high voltage biases. This situation is directly related to the inductive behavior of the MOS devices. However, it has been determined that the MOS device's inductive behavior is more effective after irradiation. These behaviors can be observed because of the ionization process, the MOS device's series resistance, surface states, and due to some displacement damages caused by ionizing radiation. Therefore, the series resistance and the radiation-induced surface states were obtained to clarify the impact of radiation on the device. It was seen that the radiation-induced surface states changed around 3x1012 for the maximum cumulative dose (10 kGy), and the series resistance values changed less than 2 Ω (it was obtained 8.74 Ω for 0 kGy and 6.82 Ω for 10 kGy). As a result, the degradation in the GaAs-based MOS device was determined to be insignificant for 10 kGy doses. Therefore, this MOS device can be safely used as an electronic component in radiation environments such as nuclear plants and satellite systems.

Thanks

The author wishes to thank Prof. Dr. Şemsettin Altındal and his research team for making it possible to conduct the application parts of this study at the Gazi University Photonic Application and Research Center.

References

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Year 2023, , 156 - 162, 04.06.2023
https://doi.org/10.17694/bajece.1210121

Abstract

References

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  • [22] V. Balasubramani, P. v. Pham, A. Ibrahim, J. Hakami, M. Z. Ansari, and T. K. Le, “Enhanced photosensitive of Schottky diodes using SrO interfaced layer in MIS structure for optoelectronic applications,” Opt Mater (Amst), vol. 129, p. 112449, Jul. 2022, doi: 10.1016/j.optmat.2022.112449.
  • [23] Ş. Karataş, Ş. Altındal, M. Ulusoy, Y. Azizian-Kalandaragh, and S. Özçelik, “Temperature dependence of electrical characteristics and interface state densities of Au/n-type Si structures with SnS doped PVC interface,” Phys Scr, vol. 97, no. 9, p. 095816, Sep. 2022, doi: 10.1088/1402-4896/ac89bb.
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Details

Primary Language English
Subjects Electrical Engineering
Journal Section Araştırma Articlessi
Authors

Ahmet Kaymaz 0000-0003-2262-1599

Early Pub Date May 30, 2023
Publication Date June 4, 2023
Published in Issue Year 2023

Cite

APA Kaymaz, A. (2023). Negative Capacitance Phenomenon in GaAs-Based MIS Devices Under Ionizing Radiation. Balkan Journal of Electrical and Computer Engineering, 11(2), 156-162. https://doi.org/10.17694/bajece.1210121

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