Doğal Oksit Arayüzey Tabakalı Zr/p-Si Schottky Diyotlarının Yüksek Frekanslarda Kapasite-Gerilim ve İletkenlik-Gerilim Karakteristiklerinin Analizi

Year 2020, , 1024 - 1030, 26.09.2020

Durmuş Ali Aldemir Havva Elif Lapa Ahmet Faruk Özdemir Nazım Uçar

https://doi.org/10.17798/bitlisfen.655179

Abstract

Termal buharlaştırma yöntemiyle imal edilen Zr/SiO2/p-Si Schottky diyotların kapasite-gerilim-frekans (C-V-f) ve iletkenlik-gerilim-frekans (G-V-f) ölçümleri 500 kHz - 3 MHz aralığında 5 farklı frekansta ve oda sıcaklığında alınmıştır. 1 MHz frekans için C-V karakteristiği yardımıyla arayüzey oksit tabakasının kalınlığı 2.33 nm olarak hesaplanmıştır. Güçlü birikim bölgesindeki C ve G değerleri kullanılarak seri direncin ortalama değeri 70.5 Ω olarak elde edilmiştir. Bu diyotlar için, Hill-Coleman metodu ile hesaplanan arayüzey durum yoğunluğunun (Dit) artan frekansla azaldığı görülmüştür. Elde edilen bulgulara göre, Zr/SiO2/p-Si Schottky diyotları hızlı anahtarlama için umut vaat edicidir.

Keywords

Schottky diyot, Silikon, Kapasite-iletkenlik

The Analysis of Capacitance-Voltage and Conductance-Voltage Characteristics of Zr/p-Si Schottky diodes with a Native Oxide Interfacial Layer at High Frequencies

Abstract

Capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G-V-f) measurements of Zr/SiO2/p-Si Schottky diodes produced by thermal evaporation method were taken for frequencies (500 kHz- 3 MHz frequencies range) at room temperature. The thickness of the interfacial oxide layer was calculated as 2.33 nm by means of C-V characteristic for 1 MHz frequency. The average value of series resistance was obtained as 70.5 Ω by using C and G values in the strong accumulation region. For these diodes, it was observed that the interfacial state density (Dit) calculated by the Hill-Coleman method decreased with increasing frequency. According to the findings, the Zr/SiO2/p-Si Schottky diodes are promising for fast switching.

Keywords

Schottky Diode, Silicon, Capacitance-conductance

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