Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer

Year 2018, Volume: 2 Issue: 2, 116 - 122, 28.12.2018

Abdulkerim Karabulut İkram Orak Abdülmecit Türüt

https://doi.org/10.32571/ijct.456902

Cited By: 22

Abstract

We have fabricated,
metal-insulator-semiconductor (MIS) structures, the Au/Ti/HfO₂/n-GaAs. Metal rectifying contacts were
made by dc magnetron sputtering technique, and hafnium
dioxide (HfO₂) interfacial
insulating layer with 3, 5 and 10 nm thickness has been formed by the atomic
layer depositon (ALD) technique.
The series resistance value from the forward bias current-voltage (I-V) curves of 3 nm and 5 nm MIS structures very slightly has reduced
with a decrease in the measurement temperature. The barrier height value from I-V characteristics increased with increasing HfO₂ layer thickness. The
barrier increment in the rectifying contacts is very important for an adequate
barrier height in FET operation and is useful for the gates of the metal-semiconductor
field-effect transistors
or also show promise as small signal zero-bias rectifiers and microwave mixers.

Keywords

Metal-Oxide-semiconductor structures, GaAs semiconductor, Hafnia HfO2, Atomic layer deposition (ALD) technique

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