PVA Kapı dielektrik tabanlı organik ince film transistörlerin performansı üzerindeki solvent etkileri

Year 2017, , 1463 - 1468, 01.12.2017

Arif Kösemen

https://doi.org/10.16984/saufenbilder.315161

Abstract

Bu çalışmada, üst kapı alt kontak transistörü hazırladık ve
karakterize ettik. Aktif tabaka olarak poli [2-metoksi-5- (2-etilheksiloksi)
-1,4-fenilenevinilen] (MEH: PPV) kapı dielektrik malzemesi olarak Polivinil
alkol (PVA) kullanılmıştır. Cihazların transistör parametreleri üzerinde çözücü
etkisini araştırılmıştır. PVA için çözücü olarak dimetil sülfoksit (DMSO) ve
ultra saf su kullanılmıştır. DMSO'nun mobilite, açma / kapama oranı ve Vth
değerleri gibi transistör parametrelerini olumlu etkilediği açık bir şekilde
görülmüştür. Ultra saf su ve DMSO içinde çözünmüş PVA kullanılarak imal edilen
OFET'lerin out-put ve transfer özellikleri incelenmiştir. OFET'in
hareketliliği, DMSO'nun PVA çözücüsü olarak kullanıldığında artmıştır. Delik
hareketliliği PVA: su bazlı cihazdan 3.07x10-5 cm2 V-1 s-1 ve PVA:DMSO tabanlı
cihazdan 2.17x10-4 cm2 V-1 s-1 olarak bulunmuştur.

Keywords

Organic kapı dielektriği, OFET, Çözücü etkisi, Organic kapı yalıtkanı, DMSO, MEH:PPV

Solvent effects on the performance of the PVA gate dielectric based organic thin film transistors

Abstract

In this study, we prepared top-gate bottom-contact
transistor and characterized.
Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH:PPV) was used as
active layer and Polyvinyl alcohol (PVA) as used gate dielectric material. We
investigated solvent effect on the transistor parameters of the devices.
Dimethyl sulfoxide (DMSO) and ultra-pure water were used as solvent for PVA.
Effect of DMSO on transistor parameters was investigated and clearly seen that
DMSO have positively influence transistor parameters such as mobility, on/off
ratio and Vth values. Output and transfer properties of OFET’s that has been
fabricated by using PVA dissolved in ultra-pure water and DMSO were analayzed.
Mobility of the OFET increased when DMSO used as solvent of PVA. Hole
mobility’s are found as 3.07x10^-5 cm² V⁻¹ s⁻¹
from PVA:water based device and 2.17x10^-4 cm² V⁻¹
s⁻¹ from PVA:DMSO based device.

Keywords

Organic gate dielectric, OFET, Solvent effect, DMSO, MEH:PPV

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