The Thin Film Phototransistor Cell with Silver Interfacial Layer

Year 2019, Volume: 8 Issue: 2, 1 - 5, 31.12.2019

İkram Orak

Abstract

In the present study,
the silver (Ag) metal particle was used between two insulating layers to fabricated
zinc-oxide (ZnO) thin film transistor. The Ag metal was evaporated with thermal
systems. The dielectric materials such as Al₂O₃ and HfO₂
were deposited atomic layer deposition (ALD) technique. In order to beter
understand the device operation and Ag layer on charge trapping layer, the some
electrical characteristics such as I_on/I_off ratio,
threshold voltage (Vth) were calculated with some different current-voltage (I-V)
measurements. These values are found to be 1.1x10³ and 2.1 V,
respectively. The I_DS-V_DS measurements were repeated 20
times to investigate the memory effect of Ag material at the interface layer. This
measurement shown that the hysterisis of memory window did not decreased. In addition
these measurements, the transistor's response was measured to light by taking I_DS-V_DS
measurements in the dark and under light. This device has been found to
be photosensitive. These results shown that the ZnO thin film transistor can be
used flash memory technology and photovoltaic device applications.

Keywords

Phototransistor, Thin film transistor, Silver

Project Number

115E664

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