Memristör taklit devresi kullanılarak yeni bir işlemsel yükselteç modeli ve faz kaydırmalı osilatör devresine uygulanması

Yıl 2024, Cilt: 39 Sayı: 3, 1963 - 1972, 20.05.2024

İshak Parlar Mehmet Nuri Almalı

https://doi.org/10.17341/gazimmfd.1199645

Öz

Bu çalışmada, geleneksel işlemsel yükselteç (741 ailesi) devre elemanının iç yapısı doğrusal TiO2 sürüklenme hızlı memristör (DTSHM) emulatör modeli ile yeniden tasarlanarak yeni bir op-amp modeli oluşturulmuştur. Önerilen bu op-amp modelinin optimize edilmiş çalışma koşulları ve durumları yeniden belirlendi. RC osilatörlerinden biri olan faz kaydırmalı osilatör (FKO) devresinde yükseltici eleman olarak memristor tabanlı op-amp modeli kullanılmıştır. Önerilen yeni FKO ile salınım başlama zamanı, yerleşme zamanı, hızlı fourier dönüşümü (FFT) analizi ve bunların çıkış parametreleri üzerindeki etkileri hem deneysel hem de simüle edilmiştir. Bu çalışmada önerilen yeni osilatör modeli, sadece orta frekans bölgesinde değil, aynı zamanda düşük ve yüksek frekans bölgelerinde de detaylı olarak değerlendirilmektedir. Ayrıca bu devrelerin verimliliği uygulama devreleri ile entegre edilmiş ve önerilen op-amp modelinin doğruluğu ve uygulanabilirliği teorik olarak kapsamlı bir şekilde çalışılmış ve deneysel ve simülasyon sonuçları ile desteklenmiştir. Son olarak önerilen op-amp modeli ile gerçekleştirilen osilatör devrelerinin hem simülasyonu hem de deneysel sonuçları tablolar halinde detaylı olarak sunulmuştur.

Anahtar Kelimeler

İşlemsel yükselteç, DTSHM taklit devresi modeli, Faz kaydırmalı osilatör (FKO), Hızlı fourier dönüşümü (HFD), Frekans bölgeleri

Simulation and experimental investigation of low, middle and high frequency regions of a phase shift oscillator with op-amp redesigned using a memristor

Öz

In this paper, a novel operational amplifier (op-amp) model was created by redesigning the internal structure of traditional op-amp (ua741 family) circuit element with the linear dopant drift TiO2 memristor (LDDTM) emulator model. The optimized operating conditions and states of this novel op-amp model were determined. The memristor based op-amp model was used as an amplifier element in the phase shift oscillator (PSO) circuit which is one of the RC oscillators. With the novel new phase shift oscillator, the oscillation settling time, start time, fast fourier transform (FFT) analysis and their effects on the output parameters are investigated both experimentally and simulated. The new oscillator model novel in this study is evaluated in detail not only in the middle frequency region, but also in the high and low frequency regions. In addition, the efficiency of these circuits has been merged with the experimental circuits, and the accuracy and practicality of the novel op-amp model has been comprehensively studied theoretically and supported by simulation and experimental results. Finally, both experimental and simulation results of the oscillator circuits realized with the novel op-amp model are shown in detail in tables.

Anahtar Kelimeler

Operational amplifier (op-amp), LDDTM emulator model, Phase shift oscillator (PSO), Fast fourier transform (FFT), Frequency regions

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