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Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures

Year 2022, , 1613 - 1619, 16.12.2022
https://doi.org/10.2339/politeknik.787700

Abstract

In this study, three samples of GaN/AlInN/AlN/Al2O3 high electron mobility (HEMT) structures are investigated with high resolution X-ray diffraction (HR-XRD) technique. Peak positions and peak broadenings are used in calculations, gained from rocking curves. Structural quality is determined from symmetric and asymmetric peak planes. Mosaic defects such as treadening dilocations (TDs), tilt and twist angles, lateral and vertical crystallite lengths are determined by using Williamson Hall (WH) method. In addition to these, surface morphology is also investigated by atomic force microscopy (AFM). It is noticed that crystal quality of epitaxial layers decrease in the order of samples C, B and A. Al compositions for samples A, B and C are found as %87.4, %86.6 and %86.4, respectively by using Vegard’s law.

Supporting Institution

Presidency Strategy and Budget Directorate

Project Number

2016K121220

Thanks

This work was supported by Presidency Strategy and Budget Directorate (Grant Number: 2016K121220).

References

  • [1] Vickers M. E., Kappers M. J., Datta R., McAleese C., Smeeton T. M., Rayment F., Humphreys C. J., “In-plane imperfections in GaN studied by x-ray diffraction”, J. Phys. D: Appl. Phys. 38, A99, (2005).
  • [2] Awual R., Asiri M., Rahman M., Alharthi H., “Assessment of enhanced nitrite removal and monitoring using ligand modified stable conjugate materials”, Chemical Engineering Journal, 363: 64-72.
  • [3] Zheng H., Chen H., Yan Z., Han Y., Yu H., Li D., Huang Q., Zhou J., “Determination of twist angle of in-plane mosaic spread of GaN films by high-resolution X-ray diffraction”, J. Cryst. Growth 255, 63 (2003).
  • [4] Xing H., Keller S., Wu Y. F., McCarthy L., Smorchkova I. P., Buttari D.,Coffie R., Green D. S., Parish G., Heikman S., Shen L., Zhang N., Xu J. J., Keller B. P., DenBaars S. P., Mishra U. K., “Gallium nitride based transistors”, J. Phys. Cond. Matt.,13: 7139-7157 (2001).
  • [5] Dunn C. G., Koch E. F., “Comparison of dislocation densities of primary and secondary recrystallization grains of Si-Fe”, Acta Metall. 5: 548 (1957).
  • [6] Heikman S., Keller S., Wu Y., Speck J., DenBaars P., Mishra K., “Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures”, Journal of Applied Physics 93, 10114.
  • [7] Çörekçi, S. Öztürk M. K., Bengi A., Çakmak M., Özçelik S., Özbay E., “Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD”, J. Mater. Sci. DOI 10.1007/s10853-010-4973-7, (2010).
  • [8] S. Çörekçi., M. K. Öztürk., B. Akaoğlu., M. Çakmak., S. Özçelik., E. Özbay., “Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer”, J. Appl. Phys. 101, 123502, (2007).
  • [9] Çörekçi S., Usanmaz D., Tekeli Z., Çakmak M., Özçelik S., Özbay E., “Surface Morphology of Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor Structure”, J. Nanoscience and Nanotechnology. 8, 640-644, (2008).
  • [10] Ungár T., “Microstructural parameters from X-ray diffraction peak broadening”, Scripta Materialia, Volume 51, Issue 8, 2004, Pages 777-781,(2004).
  • [11] Nakamura N., Furuta K., Shen X., Kitamura T., Nakamura K., Okumura H., “Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0 0 0 1) vicinal substrates”, Journal of Crystal Growth 301–302 452–456, (2007).
  • [12] Mahanty S., Hao M., Sugahara T., Fareed Q., Morishima Y., Naoi Y., Wang T., Sakai S., “V-shaped defects in InGaN/GaN multiquantum wells”, Materials Letters 41, 67–71, (1999).
  • [13] Kapolnek D., Wu X., Heying B., Keller S., Mishra U., DenBaars S., Speck J., “ Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire”, Appl. Phys. Lett. 67:1541-1543, (1995).

GaN/AlInN/AlN/Safir HEMT Yapılar için Mozaik Kusur ve AFM Çalışması

Year 2022, , 1613 - 1619, 16.12.2022
https://doi.org/10.2339/politeknik.787700

Abstract

Bu çalışmada GaN/AlInN/AlN/Al2O3 yüksek elektron mobiliteli transistör (HEMT) yapıları üç numune olacak şekilde, yüksek çözünürlüklü X-ışınları kırınımı (HR-XRD) tekniği ile incelendi. Hesaplamalarda roking eğrilerinden elde edilen pik pozisyonları ve pik genişlemeleri kullanıldı. Yapısal kalite simetrik ve asimetrik pik düzlemlerinden faydalanılarak belirlendi. Tedirgin edici dislokasyonlar (TDs), eğim ve burkulma açıları, yanal ve düşey kristal uzunlukları gibi mozaik kusurlar Wiiliamson Hall (WH) metodu kullanılarak saptandı. Bunlara ilave olarak, yüzey morfolojisi atomik kuvvet mikroskopisi (AFM) yöntemiyle belirlendi. Epitaksiyel tabakaların kristal kalitesinin örnek C, B ve A sırasına göre düştüğü farkedildi. Örnekler A, B ve C için Al kompozisyonlarının sırasıyla %87.4, %86.6 ve %86.4 olduğu Vegard yasası kullanılarak belirlendi.

Project Number

2016K121220

References

  • [1] Vickers M. E., Kappers M. J., Datta R., McAleese C., Smeeton T. M., Rayment F., Humphreys C. J., “In-plane imperfections in GaN studied by x-ray diffraction”, J. Phys. D: Appl. Phys. 38, A99, (2005).
  • [2] Awual R., Asiri M., Rahman M., Alharthi H., “Assessment of enhanced nitrite removal and monitoring using ligand modified stable conjugate materials”, Chemical Engineering Journal, 363: 64-72.
  • [3] Zheng H., Chen H., Yan Z., Han Y., Yu H., Li D., Huang Q., Zhou J., “Determination of twist angle of in-plane mosaic spread of GaN films by high-resolution X-ray diffraction”, J. Cryst. Growth 255, 63 (2003).
  • [4] Xing H., Keller S., Wu Y. F., McCarthy L., Smorchkova I. P., Buttari D.,Coffie R., Green D. S., Parish G., Heikman S., Shen L., Zhang N., Xu J. J., Keller B. P., DenBaars S. P., Mishra U. K., “Gallium nitride based transistors”, J. Phys. Cond. Matt.,13: 7139-7157 (2001).
  • [5] Dunn C. G., Koch E. F., “Comparison of dislocation densities of primary and secondary recrystallization grains of Si-Fe”, Acta Metall. 5: 548 (1957).
  • [6] Heikman S., Keller S., Wu Y., Speck J., DenBaars P., Mishra K., “Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures”, Journal of Applied Physics 93, 10114.
  • [7] Çörekçi, S. Öztürk M. K., Bengi A., Çakmak M., Özçelik S., Özbay E., “Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD”, J. Mater. Sci. DOI 10.1007/s10853-010-4973-7, (2010).
  • [8] S. Çörekçi., M. K. Öztürk., B. Akaoğlu., M. Çakmak., S. Özçelik., E. Özbay., “Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer”, J. Appl. Phys. 101, 123502, (2007).
  • [9] Çörekçi S., Usanmaz D., Tekeli Z., Çakmak M., Özçelik S., Özbay E., “Surface Morphology of Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor Structure”, J. Nanoscience and Nanotechnology. 8, 640-644, (2008).
  • [10] Ungár T., “Microstructural parameters from X-ray diffraction peak broadening”, Scripta Materialia, Volume 51, Issue 8, 2004, Pages 777-781,(2004).
  • [11] Nakamura N., Furuta K., Shen X., Kitamura T., Nakamura K., Okumura H., “Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0 0 0 1) vicinal substrates”, Journal of Crystal Growth 301–302 452–456, (2007).
  • [12] Mahanty S., Hao M., Sugahara T., Fareed Q., Morishima Y., Naoi Y., Wang T., Sakai S., “V-shaped defects in InGaN/GaN multiquantum wells”, Materials Letters 41, 67–71, (1999).
  • [13] Kapolnek D., Wu X., Heying B., Keller S., Mishra U., DenBaars S., Speck J., “ Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire”, Appl. Phys. Lett. 67:1541-1543, (1995).
There are 13 citations in total.

Details

Primary Language English
Subjects Engineering
Journal Section Research Article
Authors

Ahmet Kursat Bılgılı 0000-0003-3420-4936

Erkan Hekin This is me 0000-0003-1661-3234

Mustafa Ozturk 0000-0002-8508-5714

Süleyman Özçelik 0000-0002-3761-3711

Ekmel Özbay 0000-0003-2953-1828

Project Number 2016K121220
Publication Date December 16, 2022
Submission Date August 29, 2020
Published in Issue Year 2022

Cite

APA Bılgılı, A. K., Hekin, E., Ozturk, M., Özçelik, S., et al. (2022). Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. Politeknik Dergisi, 25(4), 1613-1619. https://doi.org/10.2339/politeknik.787700
AMA Bılgılı AK, Hekin E, Ozturk M, Özçelik S, Özbay E. Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. Politeknik Dergisi. December 2022;25(4):1613-1619. doi:10.2339/politeknik.787700
Chicago Bılgılı, Ahmet Kursat, Erkan Hekin, Mustafa Ozturk, Süleyman Özçelik, and Ekmel Özbay. “Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures”. Politeknik Dergisi 25, no. 4 (December 2022): 1613-19. https://doi.org/10.2339/politeknik.787700.
EndNote Bılgılı AK, Hekin E, Ozturk M, Özçelik S, Özbay E (December 1, 2022) Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. Politeknik Dergisi 25 4 1613–1619.
IEEE A. K. Bılgılı, E. Hekin, M. Ozturk, S. Özçelik, and E. Özbay, “Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures”, Politeknik Dergisi, vol. 25, no. 4, pp. 1613–1619, 2022, doi: 10.2339/politeknik.787700.
ISNAD Bılgılı, Ahmet Kursat et al. “Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures”. Politeknik Dergisi 25/4 (December 2022), 1613-1619. https://doi.org/10.2339/politeknik.787700.
JAMA Bılgılı AK, Hekin E, Ozturk M, Özçelik S, Özbay E. Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. Politeknik Dergisi. 2022;25:1613–1619.
MLA Bılgılı, Ahmet Kursat et al. “Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures”. Politeknik Dergisi, vol. 25, no. 4, 2022, pp. 1613-9, doi:10.2339/politeknik.787700.
Vancouver Bılgılı AK, Hekin E, Ozturk M, Özçelik S, Özbay E. Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. Politeknik Dergisi. 2022;25(4):1613-9.
 
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